Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1976-01-07

1978-01-17

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 148187, H01L 21225

Patent

active

040690741

ABSTRACT:
A method of manufacturing semiconductor devices consisting in that a substrate of a semiconductor material having the first type of conductivity is coated with a doping and a masking layer, a photoresist pattern being formed on the upper layer, a technological structure is formed by means of removing certain areas until the semiconductor substrate is reached, an insulating layer is formed around this structure, a region having the second type of conductivity is formed in the semiconductor layer by diffusing the impurity from the doping layer, windows are exposed within the technological structure by removing at least two areas of the technological structure along the perimeter thereof until the semiconductor substrate is reached, the impurity is diffused through at least one of the windows and a metallization pattern is then formed.

REFERENCES:
patent: 3193418 (1965-07-01), Cooper et al.
patent: 3418181 (1968-12-01), Robinson
patent: 3566518 (1971-03-01), Brown et al.
patent: 3608189 (1971-09-01), Gray
patent: 3646665 (1972-03-01), Kim
patent: 3698078 (1972-10-01), Redington
patent: 3764410 (1973-10-01), Hays
patent: 3933529 (1976-01-01), Goser

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