Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1976-03-16

1978-01-17

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, 148188, H01L 2126

Patent

active

040690679

ABSTRACT:
A semiconductor device is described comprising a semiconductor substrate, plural impurity-diffused regions formed in the substrate, an insulation layer formed so as to cover selected parts of the substrate, plural low-resistance semiconductor regions isolated from each other by the insulation layer and at least some of them contacting said diffused regions and conductive regions disposed in a manner to contact said low-resistance semiconductor regions, respectively.
Thus, the low-resistance semiconductor regions serve as connection means between the diffused region and the conductive region, which means serves to uniform contacting level, thereby decreasing the size of the device.

REFERENCES:
patent: 3664896 (1972-05-01), Duncan
patent: 3673679 (1972-07-01), Carbajal et al.
patent: 3730778 (1973-05-01), Shannon et al.
patent: 3771218 (1973-11-01), Langdon
patent: 3793088 (1974-02-01), Eckton, Jr.

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