Light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

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Details

257 99, 257103, 257745, 257751, H01L 3300

Patent

active

059230525

ABSTRACT:
A light emitting diode (LED) and a method for fabricating the same are disclosed, the LED including the steps of successively forming a first epitaxial layer, an active layer, and a second epitaxial layer on a substrate; patterning the active layer and the second epitaxial layer to expose a predetermined area of the first epitaxial layer; increasing an amount of N on a predetermined area of the exposed first epitaxial layer to form a TiN layer and either an Au or Al layer on the TiN layer, so as to form a first electrtode of a bilayer structure; and forming a second electrode on a predetermined area of the second epitaxial layer.

REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.

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