Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1998-02-10
1999-07-13
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 99, 257103, 257745, 257751, H01L 3300
Patent
active
059230525
ABSTRACT:
A light emitting diode (LED) and a method for fabricating the same are disclosed, the LED including the steps of successively forming a first epitaxial layer, an active layer, and a second epitaxial layer on a substrate; patterning the active layer and the second epitaxial layer to expose a predetermined area of the first epitaxial layer; increasing an amount of N on a predetermined area of the exposed first epitaxial layer to form a TiN layer and either an Au or Al layer on the TiN layer, so as to form a first electrtode of a bilayer structure; and forming a second electrode on a predetermined area of the second epitaxial layer.
REFERENCES:
patent: 5563422 (1996-10-01), Nakamura et al.
LG Electronics Inc.
Tran Minh Loan
White John P.
LandOfFree
Light emitting diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Light emitting diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2277879