Power transistor including a sense emitter and a reference emitt

Details Power transistor including a sense emitter and a reference emitt Power transistor including a sense emitter and a reference emitt

1977-09-15

1979-01-23

Wojciechowicz, Edward J.

357 28, H01L 2972

Patent

active

041363540

ABSTRACT:
A power transistor in which power dissipation may be limited to less than a destructive level is disclosed. The power transistor includes a base; a power emitter in the base; a sense emitter positioned in the base sufficiently close to the power emitter for enabling the temperature of the power emitter to be indicated as a function of the voltage across the junction of the base and the sense emitter; and a reference emitter positioned in a base at a remote position that would not be heated by the heat dissipated by the power emitter for enabling the temperature at the remote position to be indicated as a function of voltage across the junction of such base and the reference emitter. A voltage difference proportional to the temperature gradient in the power emitter induced by power dissipated in the power emitter can be sensed between the sense emitter and the reference emitter. Power dissipation in the power transistor may be limited in response to the sensed voltage difference.

REFERENCES:
patent: 3751726 (1973-08-01), Einthoven et al.
patent: 3911463 (1975-10-01), Hull et al.

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