Photo-coupled semiconductor device

Details Photo-coupled semiconductor device Photo-coupled semiconductor device

1977-04-28

1979-01-23

Edlow, Martin H.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 17, 357 68, 250551, H01L 3112

Patent

active

041363515

ABSTRACT:
A photo-coupled semiconductor device comprising a light-emitting semiconductor element, a light-receiving semiconductor element, and an insulation base supporting these two semiconductor elements. The insulation base has a pair of parallel surfaces and provides an optical path extending between the parallel surfaces for photo-coupling the semiconductor elements. Each of the semiconductor elements has at least two rigid electrodes extending in parallel to the parallel surfaces of the insulation base, and the electrodes are electrically and mechanically connected at one of their parallel surfaces by solder to conductive interconnection layers exposed at predetermined positions of one of the parallel surfaces of the insulation base. The device can satisfy both the desired increase in the efficiency of photo-coupling and the desired improvement in the massproductivity.

REFERENCES:
patent: 3436548 (1969-04-01), Beard
patent: 3636358 (1972-01-01), Groschivitz
patent: 3890636 (1975-06-01), Haroda
patent: 4001859 (1977-01-01), Miyoshi
patent: 4032962 (1977-06-01), Balyoz
patent: 4047045 (1977-09-01), Paxton
patent: 4058821 (1977-11-01), Miyoshi

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