Method for use in the manufacture of semiconductor devices

Metal treatment – Compositions – Heat treating

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134 3, 148186, 156646, H01L 21302, H01L 734

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active

041599179

ABSTRACT:
A procedure for cleaning a semiconductor material of impurities which reside on the surface of the material is disclosed. The procedure is indicated for use prior to one or more thermal processing steps for the material, and involves the exposure of the material to a cleaning gas comprised of nitric oxide and, in a presently preferred form, of anhydrous hydrochloric acid as well.

REFERENCES:
patent: 3390011 (1968-06-01), Brown et al.
patent: 3518132 (1970-06-01), Glendinning
patent: 3556879 (1971-01-01), Mayer
patent: 3672980 (1972-06-01), Glendinning et al.
patent: 3692571 (1972-09-01), Colton et al.
patent: 3711324 (1973-01-01), Glendinning et al.
patent: 3718503 (1973-02-01), Glendinning et al.
patent: 3923569 (1975-12-01), Ono et al.
J. of Electronic Materials, vol. 4, No. 3, 1975, pp. 591-624.

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