High power field effect transistor amplifier

Details High power field effect transistor amplifier High power field effect transistor amplifier

1992-07-01

1993-08-03

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, 330306, 330307, H03F 3193

Patent

active

052333132

ABSTRACT:
A high power field effect transistor (FET) amplifier which can provide a high gain over a wide bandwidth of a microwave range includes, on a first substrate on which a grounded-source field effect transistor is disposed, a series combination of an inductor and a capacitor connected between the gate of the FET and ground. The gate of the FET is coupled to an input impedance matching circuit disposed on a second substrate. The drain of the FET is coupled to an output impedance matching circuit disposed on a third substrate.

REFERENCES:
Yokouchi et al. "4 GHz 3 Watts FET Amplifier for Digital Transmission", Conference, 1978 IEEE MTT-S International Microwave Symposium, Ottawa Canada, Jun. 27-29, 1978.
Tajima et al, "7-18 GHz GaAs FET Monolithic Power Amplifiers", IEEE GaAs IC Symposium, 1982, pp. 139-141.

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