Photoconductive member having a-Ge and a-Si layers with nonunifo

Details Photoconductive member having a-Ge and a-Si layers with nonunifo Photoconductive member having a-Ge and a-Si layers with nonunifo

1984-10-29

1986-06-17

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 95, 430 57, G03G 5082

Patent

active

045956456

ABSTRACT:
A photoconductive member is provided which comprises a substrate for a photoconductive member and a light receiving layer provided on said substrate having a layer constitution comprising (1) a first layer in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, and (2) a second layer which is constituted of an amorphous material comprising silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer containing oxygen atoms and having a first layer region, a third layer region and a second layer region, with oxygen atom distribution concentration in the layer thickness direction of C(1), C(3), and C(2), respectively, in the order mentioned from the substrate side with a proviso that C(3) does not solely take the maximum value and when either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C( 1), C(2), and C(3) is zero, the three of C(1), C(2), and C(3) cannot be equal simultaneously and C(3) cannot solely take the maximum value.

REFERENCES:
patent: 4483911 (1984-11-01), Ogawa et al.
patent: 4490450 (1984-12-01), Shimizu et al.
patent: 4495262 (1985-01-01), Matsuzaki et al.

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