Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Patent
1991-09-19
1993-08-03
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
257629, 257347, 257787, H01L 2712, H01L 2701, H01L 2934
Patent
active
052332187
ABSTRACT:
A silicon-on-insulator type semiconductor wafer comprising: an upper silicon semiconductor layer used for forming electronic elements thereon; a lower silicon semiconductor layer acting as a support for the entire wafer; an intermediate silicon oxide layer inserted between the upper and lower portions and acting as an insulating layer, and a circumferential portion for protecting the silicon oxide layer, at least at the periphery thereof, against an agent for dissolving silicon oxide.
Fujitsu Limited
Prenty Mark V.
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