Method of making a substrate contact for an integrated circuit

Details Method of making a substrate contact for an integrated circuit Method of making a substrate contact for an integrated circuit

1977-12-19

1979-07-03

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29590, 357 59, 357 91, B01J 1700

Patent

active

041595610

ABSTRACT:
Electrical contact to the substrate of a COS/MOS integrated circuit made with a four photomask process and having a well region of conductivity type opposite to that of the substrate is made by ion implanting through the bond pad openings to reconvert portions of the well to the opposite conductivity type thereby allowing contact to be made to the underlying substrate from the top surface.

REFERENCES:
patent: 4050965 (1977-09-01), Ipri

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