Light-activated semiconductor-controlled rectifier

Details Light-activated semiconductor-controlled rectifier Light-activated semiconductor-controlled rectifier

1975-03-04

1977-04-05

Zazworsky, John

357 30, 357 20, 357 55, 357 86, H01L 2974

Patent

active

040165922

ABSTRACT:
A light-activated semiconductor-controlled rectifier apparatus has four layers of PNPN. The outer N-type layer comprises a first portion having a plurality of short-circuiting apertures and a second portion substantially separated from the first portion by an intermediate layer of P-type. One of the main electrodes is in ohmic contact with the first portion, with the intermediate P-type layer exposed through the short-circuiting apertures, with the periphery of the second portion and with the portion of the intermediate layer adjacent to the second portion, so that a photo signal is radiated on the second portion.

REFERENCES:
patent: 3579060 (1971-05-01), Davis
patent: 3697833 (1972-10-01), Nakata
patent: 3893153 (1975-07-01), Page et al.

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