Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1992-03-05

1993-08-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437245, 437246, 437946, 148DIG17, H01L 2144

Patent

active

052328724

ABSTRACT:
A method of forming metal contact wiring layers in semiconductor devices by cleaning the surface of an exposed substrate of a contact hole formed to the SiO.sub.2 film on a semiconductor substrate with the reducing effect of N.sub.2 H.sub.4 gas, thereafter forming a TiN barrier layer by the CVD method using the mixed gas of N.sub.2 H.sub.4 and TiCl.sub.4 while the surface is not exposed to the air, then forming a tungsten contact layer thereon by the CVD method using the mixed gas of N.sub.2 H.sub.4 and WF.sub.6, or forming the TiN layer by the CVD method on the tungsten contact layer formed by the CVD method on the substrate.

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patent: 4910044 (1990-03-01), Yamazaki et al.
patent: 4987008 (1991-01-01), Yamazaki et al.
Bagratishvili; "Hydraulic Plasma Etching of Semiconductor Surfaces", Chemical Abstracts; vol. 100; 1984; p. 130841.

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