Method for production of bonded wafer

Details Method for production of bonded wafer Method for production of bonded wafer

1991-09-04

1993-08-03

Fourson, George

Fishing, trapping, and vermin destroying

437 86, 437974, 148DIG12, H01L 2134

Patent

active

052328708

ABSTRACT:
A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxygen immediately before the two semiconductor wafers are joined to each other. One of the two semiconductor wafers to be used for the bonded wafer optionally has an oxide film formed on one surface thereof. One of the component wafers of the bonded wafer is optionally polished until the component wafer is reduced to a thin film.

REFERENCES:
Wolf, S., et al., Silicon Processing for the VLSI Era: vol. 1: Process Technology, 1986, p. 219.
Haisma, J., et al., "Silicon on Insulator Wafer Bonding Wafer Thinning . . . ", Jap. J. Appl. Phys., vol. 28, No. 8, Aug. 1989, pp. 1426-1443.

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