Method for the making of optoelectronic semiconductor devices

Details Method for the making of optoelectronic semiconductor devices Method for the making of optoelectronic semiconductor devices

1992-04-10

1993-08-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437167, 437936, 148DIG160, H01L 21203

Patent

active

052328678

ABSTRACT:
A method for the making of an optoelectronic device comprising at least one quantum well, the barriers of which are made of GaInP and the well of which is made of GaAs, is carried out by the interdiffusion of elements between barriers and quantum wells in such a way that there is a migration of at least indium elements from a barrier to the quantum well. The method can be applied to the making of quantum well lasers, photodetectors and optical guides.

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