Method and composition for depositing silicon dioxide layers

Coating processes – Coating by vapor – gas – or smoke

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427 58, 427109, 4271262, 4271263, 427164, 427166, 427167, 4272551, 4272557, 427294, B32B 700, B32B 300

Patent

active

047803347

ABSTRACT:
A method and composition for depositing SiO.sub.2 on substrates by chemical vapor deposition are provided wherein aminoxysilane reagents are utilized. These aminoxysilane reagents pyrolyze at about the same temperatures as organometallic reagents, permitting multiple alternating layers of silicon dioxide and metal oxides to be formed at the same operating temperature.

REFERENCES:
patent: 2840489 (1958-06-01), Kempter et al.
patent: 4505985 (1985-03-01), Schmidt et al.
patent: 4663373 (1987-05-01), Ravichandran

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and composition for depositing silicon dioxide layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and composition for depositing silicon dioxide layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and composition for depositing silicon dioxide layers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2268612

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.