Semiconductor device and process for producing the same

Details Semiconductor device and process for producing the same Semiconductor device and process for producing the same

1978-06-05

1981-02-17

Wojciechowicz, Edward J.

357 52, 357 53, 357 55, 357 56, 357 59, H01L 2978

Patent

active

042518288

ABSTRACT:
An improvement for preventing a short circuit between the source and drain regions of an MOS type semiconductor device. The source and drain regions are placed on an insulating layer to reduce the junction capacitance between these layers and a semiconductor substrate in the MOS type semiconductor device. The polycrystalline silicon, which was present in the conventional device between the source and drain regions, and thus caused the short, is changed by the improvement to an insulating material. Disclosed also herein is an advantageous process for producing the semiconductor device.

REFERENCES:
patent: 4041518 (1977-09-01), Shimizu et al.
I.E.D.M. Tech. Digest (1973)-pp. 244-247.

Affiliated with

Also associated with

Rating

Semiconductor device and process for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and process for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and process for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2264932