Semiconductor memory device

Static information storage and retrieval – Format or disposition of elements

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365 63, G11C 1300

Patent

active

051013770

ABSTRACT:
The device has an architecture for improving the degree of integration by an amount corresponding to the reduction rate of memory cells, in which a plurality of memory cells are formed above or below each of a plurality of sense amplifiers.

REFERENCES:
patent: 3786444 (1974-01-01), Sly
patent: 4424579 (1984-01-01), Roesner
patent: 4527254 (1985-07-01), Ryan et al.
patent: 4888631 (1989-12-01), Azuma et al.
FAM 19.5: A 4Mb DRAM with cross-point Trench Transistor Cell, Ashwin H. Shah et al, Texas Instruments, Inc. 1986 IEEE International Solid-State Circuits Conference, Feb. 21, 1986; pp. 268-269.

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