Tailorable infrared sensing device with strain layer superlattic

Details Tailorable infrared sensing device with strain layer superlattic Tailorable infrared sensing device with strain layer superlattic

1986-08-28

1987-12-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 7, 437 8, 437128, 437131, 437969, 357 30, H01L 3104, H01L 2912, H01L 3106

Patent

active

047118571

ABSTRACT:
An infrared photodetector is formed of a heavily doped p-type Ge.sub.x Si.sub.1-x /Si superlattice in which x is pre-established during manufacture in the range 0 to 100 percent. A custom tailored photodetector that can differentiate among close wavelengths in the range of 2.7 to 50 microns is fabricated by appropriate selection of the alloy constituency value, x, to establish a specific wavelength at which photodetection cut-off will occur.

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