Static induction type thyristor

Details Static induction type thyristor Static induction type thyristor

1987-05-08

1990-06-19

Clawson, Jr., Joseph E.

357 22, 357 86, H01C 2974

Patent

active

049357980

ABSTRACT:
In a static induction type thyristor comprising a low impurity concentration channel region having opposed first and second major surfaces, a first main electrode region having one conductivity type and a second main electrode region having another conductivity type opposite to the one conductivity type and provided on the first and second major surfaces, respectively, and a gate region provided in the vicinity of the first main electrode region, there intervenes, between the channel region and the second main electrode region, a thin layer region having the same conductivity type as that of first main electrode region. The provision of this thin layer reegion contributes to allowing a markedly low impurity concentration as well as a decreased thickness of the channel region for a given maximum forward blocking voltage, making it feasible to obtain a high maximum forward blocking voltage and a high switching speed.

REFERENCES:
patent: 4223328 (1980-09-01), Terasawa et al.
patent: 4514747 (1985-04-01), Miyata et al.

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