Heterojunction bipolar transistors

Details Heterojunction bipolar transistors Heterojunction bipolar transistors

1988-10-31

1990-06-19

Wojciechowicz, Edward J.

357 16, 357 52, 357 55, 357 68, H01L 2972

Patent

active

049357972

ABSTRACT:
Heterojunction bipolar transistor technology employing in a body wherein a larger area base electrode over a buried electrode has above it a smaller area electrode, an overhang capability on the portion of the smaller area electrode that operates to mask the base layer in converting the extrinsic portion to high conductivity and assists lift-off of base contact metal such that the base contact metal is in extremely close proximity to the smaller area electrode.

REFERENCES:
patent: 4379005 (1983-04-01), Hovel et al.
IEEE Electron Device Letters, vol. EDL-7, No. 12, Dec. 1986, pp. 694-696, "Emitter-Base-Collector Self-Aligned Heterojunction Bipolar Transistors Using Wet Etching Process"-EDA et al.
IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986, pp. 615-617, "A Fully Planar Heterojunction Bipolar Transistor" by Tully et al.
1985 IEEE IEDM Proceedings, pp. 328-331, "AlGaAs/GaAs Heterojunction Bipolar Transistors" by Izawa et al.

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