Semiconductor memory device and method of manufacturing it

Details Semiconductor memory device and method of manufacturing it Semiconductor memory device and method of manufacturing it

1991-07-25

1992-03-31

Carroll, J.

357 234, 357 239, 357 59, 357 65, H01L 2910, H01L 2904, H01L 2348

Patent

active

051012626

ABSTRACT:
A semiconductor memory device including: a semiconductor substrate of a first conductivity type; triple-layer gate electrode structure formed on the semiconductor substrate and having first insulating film and second insulating film on upper and lower sides of the electrode; a pair of first impurity regions of a second conductivity type in the semiconductor substrate for contacting an opposite side face of the gate electrode structure; an impurity region selectively formed in a channel region corresponding to the data to be fixed in the memory device; an insulating wall on a portion of at least one side face of the gate electrode structure; a pair of second impurity regions of the second conductivity type in the substrate, each of the second regions overlapping with a corresponding one of the first impurity regions for contacting an opposite side face of the insulating wall; a contact pad layer connected to one of the second impurity regions for covering at least a portion of the first insulating film; and a wiring layer connected to the contact pad layer.

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