Schottky barrier semiconductor photodetector including graded en

Details Schottky barrier semiconductor photodetector including graded en Schottky barrier semiconductor photodetector including graded en

1990-12-06

1992-03-31

Mintel, William

357 16, 357 15, 357 90, H01L 2714

Patent

active

051012545

ABSTRACT:
A semiconductor photodetector includes a semiconductor layer disposed on a main surface of a first conductivity type semiconductor substrate and a metal layer producing a Schottky junction with the semiconductor layer disposed on a main surface of the semiconductor layer. The semiconductor layer has such an energy band gap in the neighborhood of the Schottky junction in a depletion layer in the first conductivity type semiconductor substrate and the semiconductor layer that no barrier to the flow of majority carriers from the metal layer to the first conductivity type semiconductor substrate is produced and a barrier to the flow of minority carriers from the first conductivity type semiconductor substrate to the metal layer is produced. Therefore, a semiconductor photodetector that suppresses the dark current caused by thermal excitation and noise in the detected signal is obtained.

REFERENCES:
patent: 4661829 (1987-04-01), Bean et al.
patent: 4710788 (1987-12-01), Dambkes et al.
patent: 4939561 (1990-07-01), Yamaka et al.
Lang et al., "Measurement of the Band Gap of Ge.sub.x Si.sub.1-x /Si Strained-Layer Heterostructures", Applied Physics Letters, vol. 47, No. 12, Dec. 1985, pp. 1333-1335.
Sze, "Physics of Semiconductor Devices", vol. 2, p. 289.
Gibbons et al., "Si/Si.sub.1-x Ge.sub.x Heterojunction . . . Reaction Processing", IEDM Technical Digest, 1988, pp. 566-569.

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