Semiconductor schottky device with pn regions

Details Semiconductor schottky device with pn regions Semiconductor schottky device with pn regions

1991-02-26

1992-03-31

Mintel, William

357 52, 357 53, 357 13, 357 48, H01L 2948

Patent

active

051012448

ABSTRACT:
A semiconductor device has a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J.sub.F is passed into the second diodes, the relation ##EQU1## is established in a forward voltage V.sub.F range of 0.1 (V) to 0.3 (V), where k represents the Boltzmann constant, T represents the absolute temperature, and q represents the quantity of electron charges. The first diode is constituted by a first semiconductor region of one conductive type and a second semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in ohmic contact with one main electrode, and so as to have an impurity concentration higher than that of the first semiconductor region, and the second diode is constituted by the first semiconductor region of the one conductive type and a third semiconductor region of the other conductive type provided so as to be adjacent to the first semiconductor region to form a pn junction, so as to be in contact through a Schottky barrier with the one main electrode, and so as to have an impurity concentration higher than the first semiconductor region.

REFERENCES:
patent: 4862229 (1989-08-01), Mundy
3rd European Conference on Power Electronics and Applications, Oct. 9-12, 1989, pp. 611-616, Schlangenotto et al., "Improved Reverse Recovery of Fast Power Diodes Having a Self-Adjusting P Emitter Efficiency".
Baliga et al., "The Merged P-In Schottky (MPS) Rectifier: A High-Voltage, High Speed Power Diode", IEEE International Electron Devices Meeting IEDM 87, pp. 658-661.

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