1990-02-20
1992-03-31
Arnold, Bruce Y.
357 237, H01L 2712
Patent
active
051012421
ABSTRACT:
A thin film transistor is described incorporating a gate electrode, a layer of insulating material, a layer of buffer material, a layer of semiconductor material, a source electrode and drain electrode. The invention reduces the problem of variation in threshold voltage of thin film transistors due to external stress such as the gate voltage or temperature.
REFERENCES:
An Amorphous SiC:H Emitter Heterojunction Bitransistor Sasouki et al. IEEE vol. EDL-6 No. 6 Jun. 1985.
Ikeda Hiroyuki
Murakami Takahiro
Shimada Osamu
Uchida Teruo
Arnold Bruce Y.
Dang Hung
International Business Machines - Corporation
Trepp Robert M.
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