Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1988-08-03

1990-06-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 43, 437 49, 437193, 437200, 437982, H01L 2100

Patent

active

049353802

ABSTRACT:
A polyside gate of a prescribed shape with a protection film formed on the upper surface thereof is formed on a main surface of a semiconductor substrate. The protection film protects the upper surface of the polyside gate from oxidation in heat treatment. Impurities are implanted in the semiconductor substrate using the polyside gate and the protection film as a mask. The implanted impurities are diffused in the semiconductor substrate by the heat treatment, thereby providing a MOS transistor. A polyside gate of a prescribed shape is formed on a main surface of a semiconductor substrate and an interlayer insulating film is formed to cover the polyside gate. A protection film is formed on the interlayer insulating film and a reflow film is further formed thereon. The protection film protects the polyside gate from oxidation. The surface of the reflow film is made smooth by the heat treatment.

REFERENCES:
patent: 4332207 (1986-07-01), Levinstein et al.
patent: 4782037 (1988-11-01), Tomozawa et al.
B. Crowder and S. Zirinsky, "1 um MOSFET VLSI Technology: Part VII-Metal Silicide Interconnection Technology-A Future Perspective" IEEE Transactions on Electron Devices, vol. ED-26, No. 4 (Apr. 1979): 369, 371.
P. Tsang et al., "Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology", IEEE Transactions on Electron Devices, vol. ED-29, No. 4 (Apr. 1982): 590, 596.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2260280