Method for forming self-aligned conducting pillars in an (IC) fa

Details Method for forming self-aligned conducting pillars in an (IC) fa Method for forming self-aligned conducting pillars in an (IC) fa

1990-10-04

1992-03-31

Quach, T. N.

Fishing, trapping, and vermin destroying

437 50, 437228, 437229, 437984, 148DIG106, H01L 21283

Patent

active

051008386

ABSTRACT:
A method of forming conducting pillars in a semiconductor integrated circuit which are defined by insulating spacers of a previous conducting layer. The method includes the steps of forming parallel-spaced conductor lines on a silicon substrate having spaces therebetween; forming insulating spacers on the sidewalls of the conductor lines while leaving a gap between the lines; filling the gaps with a conductor film and etching the film to form conducting pillars; and photo-etching contact vias to the conducting pillars for forming a multilevel interconnect between the conductor lines and another conductor.

REFERENCES:
patent: 3753774 (1973-08-01), Veloric
patent: 4458410 (1984-07-01), Sugaki
patent: 4808552 (1989-02-01), Anderson
patent: 4868138 (1989-09-01), Chan et al.
patent: 4871688 (1989-10-01), Lowrey
patent: 4957881 (1990-09-01), Crotti
patent: 4997790 (1991-03-01), Woo et al.
patent: 5037777 (1991-08-01), Mele et al.
Wei et al., "The use of selective silicide plugs for submicron contact fill"; Jun. 12, 1989, VMIC Conference. pp. 136-143.
Yamazaki et al., "Selective CVD tungsten contact plug technology"; Jun. 12, 1989, VMIC Conference. pp. 151-157.
Hamajima et al., "Low contact resistance polysilicon plug for halfmicron CMOS technology"; Jun. 12, 1989, VMIC Conference. pp. 144-150.

Affiliated with

Also associated with

Rating

Method for forming self-aligned conducting pillars in an (IC) fa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming self-aligned conducting pillars in an (IC) fa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming self-aligned conducting pillars in an (IC) fa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2259082