Method for fabricating semiconductor device

Fishing – trapping – and vermin destroying

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437 93, 437126, 437133, 437 45, 148DIG72, H01L 2120

Patent

active

051008319

ABSTRACT:
A semiconductor device comprising a plurality of elemental active devices being operable with different threshold voltages is disclosed. Each of the elemental active devices, e.g. D made and E made HEMT, is formed of each of different active layers epitaxially grown on each of different regions of a semiconductor substrate. Since the different regions have different surface orientations or surface areas, each of the different active layers have different carrier densities corresponding to the surface orientation or the surface areas.

REFERENCES:
patent: 4085498 (1978-04-01), Rideout
patent: 4166223 (1979-08-01), Bluzer
patent: 4177390 (1979-12-01), Cappon

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