Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1990-02-16

1992-03-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 69, 437 70, 437 89, 437 90, H01L 2176

Patent

active

051008300

ABSTRACT:
In a method for manufacturing a semiconductor device using a LOCOS technique, a selective oxidation is performed using an oxidation-resistance film as a mask to form an element isolating oxide film on the semiconductor substrate. An inserting portion of the oxide film is formed under an end portion of the oxidation-resistance film. The feature of this method lies in that the inserting portion of the oxide film is left as an element isolating oxide film and the other portion thereof is removed to selectively expose the substrate, and then a monocrystalline silicon layer is formed on the exposed portion of the substrate and used as an element region.

REFERENCES:
patent: 4746625 (1988-05-01), Morita et al.
patent: 4948456 (1990-08-01), Schubert
patent: 4948748 (1990-08-01), Kitahara et al.
patent: 4948751 (1990-08-01), Okamoto

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