Method of making small contactless RAM cell

Details Method of making small contactless RAM cell Method of making small contactless RAM cell

1991-05-16

1992-03-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 31, 437 34, 437 48, 437 54, 437 59, 437162, 437200, 437228, H01L 2170

Patent

active

051008246

ABSTRACT:
There is disclosed a static RAM cell and MOS device for making the cell along with a process for making the types or devices disclosed. The devices is an MOS device built in an isolated island of epitaxial silicon similar to bipolar device isolation islands, and has single level polysilicon with self-aligned silicide coating for source, drain and gate contacts such that no contact windows need be formed inside the isolation island to make contact with the transistor. The static RAM cell formed using this device uses extensions of the polysilicon contacts outside the isolation islands as shared nodes to implement the conventional cross coupling of various gates to drain and source electrodes of the other transistors in the flip flop. Similarly, extensions of various gate, source and drain contact electrodes are used as shared word lines, and shared Vcc and ground contacts.

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