Zinc-sulphide capping layer for gallium-arsenide device

Details Zinc-sulphide capping layer for gallium-arsenide device Zinc-sulphide capping layer for gallium-arsenide device

1980-05-30

1982-10-12

Edlow, Martin H.

357 30, 357 52, H01L 29161

Patent

active

043541984

ABSTRACT:
The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.

REFERENCES:
patent: 3982265 (1976-09-01), Johnston, Jr.
patent: 3988172 (1976-10-01), Bachmann
patent: 4095011 (1978-06-01), Hawrylo et al.
patent: 4108684 (1978-08-01), Zanio
"A Technique for the Growth of Single Crystal Films of Zinc Sulphide on (100) Gallium Arsenide" by P. L. Jones et al.
Journal of Physics E: Scientific Instruments, pp. 312-316, vol. 9, No. 4, Apr. 1976.
"Laser Annealing of Bi-implanted ZnTe" by A. Bontemps, et al, in Applied Physics Letter, pp. 542-544, 36(7), Apr. 1980.

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