Frame transfer image sensor with electronic shutter

Electrical pulse counters – pulse dividers – or shift registers: c – Charge transfer device – Compensating for or preventing signal charge deterioration

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Details

257217, 257223, 257229, 257230, 257231, 257247, G11C 1928, H01L 29796

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active

054024595

ABSTRACT:
An image sensing device with electronic shutter having a semiconductor substrate of a first conductivity type and a buried channel layer of a second conductivity type disposed on the substrate. Virtual phase electrodes in the buried channel layer having the first conductivity type form virtual gate potential areas in the substrate below the virtual phase electrodes. An insulating layer is formed on the substrate. Conductive electrodes disposed on the insulating layer and located over portions of the substrate between the virtual phase electrodes form clocked gate potential areas in the substrate below the conductive electrodes. The virtual gate potential areas and the clocked gate potential areas form charge transfer columns along which charge can be transferred to an end of the charge transfer column. A fast charge transfer mode wherein every other conductive electrode in a charge transfer column is clocked out of phase from the other conductive electrodes provides fast charge transfer through the charge transfer column.

REFERENCES:
patent: 4229752 (1980-10-01), Hynecek
patent: 4245164 (1981-01-01), Funahashi
patent: 4649407 (1987-03-01), Kitamura et al.
patent: 4660090 (1987-04-01), Hynecek
patent: 4673963 (1987-06-01), Hynecek
patent: 4679212 (1987-07-01), Hynecek
patent: 4733406 (1988-03-01), Kinoshita
patent: 4742381 (1988-03-01), Fujii
patent: 4995061 (1991-02-01), Hynecek
patent: 5151380 (1992-09-01), Hynecek
Electron-Hole Recombination Antiblooming for Virtual Phase CCD Imager, Jaroslav Hynecek, IEEE Transactions on Electron Devices, vol. ED-30, No.8, Aug. 1983.

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