High density EEPROM cell array with improved access time and met

Details High density EEPROM cell array with improved access time and met High density EEPROM cell array with improved access time and met

1993-11-15

1995-03-28

Limanek, Robert P.

Static information storage and retrieval

Floating gate

Particular biasing

36523006, 257321, G11C 800

Patent

active

054023726

ABSTRACT:
The memory array of a high density, electrically-erasable, programmable read-only-memory (EEPROM) is divided into a series of segments which are individually accessible via a plurality of segment select transistors. When a specific memory cell or cells is to be read, only the segment select transistors which correspond to the segment of memory which contains the specific memory cell or cells are turned on. As a result, the time required to access the specific memory cell or cells can be significantly reduced.

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