Fishing – trapping – and vermin destroying
Patent
1996-03-12
1997-09-30
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437 61, H01L 21336
Patent
active
056725264
ABSTRACT:
A method of making a semiconductor device and includes a step of forming a field shield electrode of a thin film of at least one of polysilicon and amorphous silicon on an element-isolation region of a semiconductor substrate. An insulating film is interposed therebetween and having a thickness of less than 10 nm and not less than 5 nm. A further step includes applying heat treatment at a temperature not lower than 700.degree. C. to the semiconductor substrate on which at least the field shield electrode is formed.
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Nippon Steel Corporation
Wilczewski Mary
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