Patent
1988-12-23
1990-06-19
Gonzalez, Frank
G02B 610
Patent
active
049347764
ABSTRACT:
An integrated optical intensity modulator is constructed by cascading individual waveguide directional coupler sections, each having a primary and secondary waveguide and a pair of uniform electrodes. A modulator normally operating in an OFF state has a bar-type structure such that the primary waveguides form one complete and straight waveguide. An input optical signal applied to this modulator propagates straight through the device. Another modulator structure normally operating in an ON state has a cross-type configuration which operates such that the coupled signal from one coupler section serves as the input signal for a next section. Each modulator is driven from its normal state into an opposite state by applying a voltage to the electrodes for inducing changes in the refractive index profile. A plurality of the optical modulators are fabricated in parallel on an integrated optical wafer to form a high-density optical gate array.
REFERENCES:
patent: 4273411 (1981-06-01), Alferness
patent: 4815803 (1989-03-01), Faulkner et al.
R. C. Alferness, "Waveguide Electro-optic Modulators," IEEE Trans. on Microwave Theory and Techniques, MTT-30, pp. 1121-1137, (1982).
K. Takizawa, "Electro-optic Cutoff Modulator Using . . . Asymmetric Strip Electrodes," Optics Letters, 11, pp. 818-820, (1986).
Granestrand et al, "Strictly Nonblocking 8.times.8 Integrated Optical Switch Matrix", "Electronic Letters", 22, pp. 816-817, (1986).
Cannon, Jr. James J.
Gonzalez Frank
GTE Laboratories Incorporated
Heartney Phan T.
Lohmann, III Victor F.
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