Apparatus for vapor-phase epitaxial growth

Details Apparatus for vapor-phase epitaxial growth Apparatus for vapor-phase epitaxial growth

1996-04-25

1997-09-30

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for treating single-crystal

117204, 118715, 118723VE, C30B 3500

Patent

active

056722044

ABSTRACT:
An apparatus for a vapor-phase epitaxial growth of a thin film on a substrate, which attains a decrease in the transition width, and at the same time, enables the thin film to be formed in a uniform thickness. This apparatus comprises a reaction vessel 18 of a flat shape, supply nozzles 15 for feeding a source gas 19 from a peripheral part of the reaction vessel 18, a susceptor 13 for holding a semiconductor single crystal substrate(s) 12 substantially horizontally, an infrared heating lamp 14, and a gas outlet 11 provided in a central part of an upper wall of the reaction vessel 18. Owing to this apparatus, the source gas 19 is gathered in a central part of the reaction vessel 18 without forming a vortex and then is discharged through the gas outlet 11.

REFERENCES:
patent: 3293074 (1966-12-01), Nickl
patent: 4033286 (1977-07-01), Shy-Shiun et al.
patent: 4323031 (1982-04-01), Kaplan
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 5531834 (1996-07-01), Ishizuka et al.
Journal of Crystal Growth 107 No. 1/04 1 Jan. 1991.

Affiliated with

Also associated with

Rating

Apparatus for vapor-phase epitaxial growth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for vapor-phase epitaxial growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for vapor-phase epitaxial growth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2254169