Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1994-07-05
1995-03-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257201, 257441, 257442, 257466, 136256, H01L 2714
Patent
active
054019869
ABSTRACT:
A photoresponsive device wherein the device includes semiconductor material, such as a cap region (14a), comprised of elements selected from Group IIB-VIA. A molybdenum contact pad (16) is formed upon a surface of the cap region, and a molybdenum ground contact pad is formed on a surface of a base region (12). A wide bandgap semiconductor passivation layer (20) overlies the surface of the cap region and also partially overlies the molybdenum contact pad. A dielectric layer (22) overlies the passivation layer, and an indium bump (24) is formed upon the molybdenum contact pad. The dielectric layer is in intimate contact with side surfaces of the indium bump such that no portion of the molybdenum contact pad can be physically contacted from a top surface of the dielectric layer. This method eliminates the possibility of unwanted chemical reactions occurring between the In and the underlying contact pad metal. The method also deposits the contact metal before the deposition of the passivation and before a high temperature anneal, with windows to the contact being opened after the anneal so as to reduce localized stresses at the edges of the windows.
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Cockrum Charles A.
Gesswein Francis I.
Schulte Eric F.
Denson-Low W. K.
Mintel William
Santa Barbara Research Center
Schubert W. C.
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