Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1994-06-06
1995-03-28
King, Roy V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
428336, 428450, 427 58, 427226, 327365, H03K 1923
Patent
active
054019818
ABSTRACT:
This invention relates to a threshold switching device which exhibits negative differential resistance, and which is made by depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.
REFERENCES:
patent: 4756977 (1988-07-01), Haluska et al.
patent: 5283545 (1994-02-01), Pernisz
patent: 5293335 (1994-03-01), Pernisz
Michael Keith W.
Pernisz Udo C.
Dow Corning Corporation
Gobrogge Roger E.
King Roy V.
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