Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1995-11-06
1997-09-30
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257440, 257437, 257443, 257446, H01L 3100
Patent
active
056719140
ABSTRACT:
A multi-band spectroscopic photodetector array including a substrate having a buried insulator layer in the substrate for electrically isolating a lower section of the substrate located below the insulator layer form an upper section of the substrate located above the insulator layer; and a plurality of photodetection elements each formed on a different portion of the upper layer and each including elements for detecting photons in a selected wavelength range; wherein each of the different portions of the upper section has a different thickness and wherein the thickness at least in part determines the selected wavelength of the photons detected by each of the detection elements.
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Kalkhoran Nader M.
Namavar Fereydoon
Bianco John V.
Engellenner Thomas J.
Mintel William
Spire Corporation
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