Method of evaluating semiconductor device without electrical inf

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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G01R 3126

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active

057239835

ABSTRACT:
A circuit component such as a field effect transistor in a semiconductor device is evaluated without an influence of parasitic components by comparing a set of y-parameters or a set of z-parameters of the circuit component with a set of y-parameters or a set of z-parameters of a first comparative sample equivalent to the semiconductor device without the circuit component and a set of y-parameters or a set of z-parameters of a second comparative sample equivalent to the semiconductor device with the circuit component short-circuited, and the sets of y-parameters or z-parameters are obtained from sets of four-terminal parameters measured under the same conditions.

REFERENCES:
patent: 4894612 (1990-01-01), Drake et al.
patent: 5396184 (1995-03-01), Frank et al.
S. Lee et al., "New Circuit Model for RF Probe Pads and Interconnections for the Extraction of HBT Equivalent Circuits," IEEE Electron Device Letters, vol. 12, No. 10, Oct. 1991, pp. 521-523.

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