Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-09-11
1998-03-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257637, 257642, H01L 2358
Patent
active
057239096
ABSTRACT:
A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
REFERENCES:
patent: 5219791 (1993-06-01), Freiberger
patent: 5319247 (1994-06-01), Matsuura
K. Fujino et al., "Surface Modification of Base Materials for TEOS/O.sub.3 Atmospheric Pressure Chemical Vapor Deposition", J. Electrochem. Soc. vol. 139, No. 6 (1992), pp. 1690-1692.
Y. Nishimoto et al., "Countermeasure for Hygroscopic Insulator Film", Treatment after Plasma Treatment, Semiconductor Process Research, Semiconductor World, 1993, pp. 82-88.
"Countermeasure for Hygroscopic Insulator Film Effect of Low-Temperature Annealing to Hygroscopicity of Films using TEOS-O.sub.3 APCVD", Semiconductor World, 1993, pp. 77-81.
H. Kotani, "Low-Temperature APCVD Oxide Using TEOS-Ozone Chemistry for Multilevel Interconnections", IEEE, 1989, pp. 669-672.
Nomura Noboru
Sugiyama Tatsuo
Ueda Satoshi
Yano Kousaku
Jackson Jerome
Kelley Nathan K.
Matsushita Electric - Industrial Co., Ltd.
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