Method of manufacturing a light-emitting semiconductor device su

Details Method of manufacturing a light-emitting semiconductor device su Method of manufacturing a light-emitting semiconductor device su

1992-12-02

1995-03-28

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437127, 437130, 437133, 437905, 437974, 148DIG101, 148DIG135, H01L 21208, H01L 3300

Patent

active

054016843

ABSTRACT:
Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.

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