Fishing – trapping – and vermin destroying
Patent
1993-08-24
1995-03-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437233, H01L 2144
Patent
active
054016738
ABSTRACT:
A first conductive film which is formed on both an insulating film and a field insulating film is covered by a buffer insulating film. After that, an opening is formed through from a region on the semiconductor substrate to a region on the field insulating film by patterning the insulating film, the first conductive film and the buffer insulating film. Then, the surface of the semiconductor substrate in the opening is processed by using vapor-etching method. Lastly, the second conductive film connected to the semiconductor substrate in the opening is formed. When vapor-etching, the buffer insulating film remains around the opening, so that a etchant is supplied uniformly. Thereby, excessive etching is restrained, then the field insulating film with sufficient thickness remains in the opening. Also, the natural oxide in the opening has been exposed to the etchant from the first stage of etching, so that the natural oxide is securely etched and removed.
REFERENCES:
patent: 4341009 (1982-07-01), Barthalomew et al.
patent: 5037772 (1991-08-01), McDonald
patent: 5179031 (1993-01-01), Brassington et al.
Chaudhuri Olik
Everhart C.
Fujitsu Limited
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