Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-02-06
1999-04-20
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257665, 337290, 337142, H01H 85046
Patent
active
058959637
ABSTRACT:
A semiconductor device according to the present invention comprises a fuse provided on a substrate, a first insulating layer formed on the substrate and the first insulating layer, a first wiring formed on the first insulating layer, a second insulating layer formed on the first wiring, the second insulating layer including a plurality of insulating films including a water absorptive overcoat, a second wiring formed on the second insulating layer, an opening portion formed in a portion of the second insulating layer corresponding to the fuse by selectively removing the portion and having a side face formed by an exposed portion of the second insulating layer and a bottom face formed by the exposed first insulating layer, a side wall film formed of the same material as that of the second wiring and covering the exposed side face of the opening portion and a passivation film formed on the second insulating layer, the second insulating layer and the side wall film.
REFERENCES:
patent: 5235205 (1993-08-01), Lippitt, III
patent: 5578861 (1996-11-01), Kinoshita et al.
patent: 5723898 (1998-03-01), Gilmour et al.
patent: 5754089 (1998-05-01), Chen et al.
Guay John
NEC Corporation
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