Bus bar having reduced parasitic inductances and equal current p

Details Bus bar having reduced parasitic inductances and equal current p Bus bar having reduced parasitic inductances and equal current p

1994-07-05

1996-06-18

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257691, 257700, 257724, H01L 2507, H01L 2352

Patent

active

055280730

ABSTRACT:
A bus bar having reduced parasitic inductance and equal current path legends. A bus bar of the present invention has a first plate connected to a collector of a first transistor, a collector of a second transistor, an emitter of a third transistor and an emitter of a fourth transistor; a second plate including a second plate input connected to a collector of the third transistor and a collector of the fourth transistor; a third plate including a third plate input connected to an emitter of the first transistor and an emitter of the second transistor; and a fourth plate which is connected to the first plate. The first plate, the second plate, and the third plate are disposed such that the lengths of the current paths from the fourth plate through the first transistor to the input of the third plate is equal to the length of the current path from the fourth plate through the second transistor to the input of the third plate. Similarly, the current path from the fourth plate through the third transistor to the input of the second plate is equal to the length of the current path from the fourth plate through the fourth transistor to the input of the second plate. A bus bar of the present invention has many advantages including reduced parasitic inductances, equal current path lengths, ease of construction, the ability to keep parallel transistor operating temperatures equal, and the inputs and output being located on the same side of the bus bar.

REFERENCES:
patent: 4907068 (1990-03-01), Amann et al.
patent: 5347158 (1994-09-01), Matsuda et al.

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