Method and apparatus for forming very small scale Cu interconnec

Details Method and apparatus for forming very small scale Cu interconnec Method and apparatus for forming very small scale Cu interconnec

1996-07-22

1998-03-03

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

156345, 216 18, 216 38, 216 39, 438697, H01L 2100

Patent

active

057233870

ABSTRACT:
A self contained unit for forming Cu metallurgy interconnection structures on SC substrates. The unit has an enclosed chamber with a plurality of apparatus for performing wet processes, including electroless metal plating and planarization. The unit provides a way of reducing the number of times the wafer is transferred between the wet process steps that require less environmental cleanliness and dry very clean processes steps.

REFERENCES:
patent: 5110394 (1992-05-01), Ogawa
patent: 5372647 (1994-12-01), Ohmi
patent: 5380682 (1995-01-01), Edwards et al.
"Dual Damascene Copper Metallization Process Using Chemical Mechanical Polishing" by S. Lakshiminarayanan.
"Selective and Blanket Electroless Cu Plating Initiated by Contact Filling", Dublin et al, Jun. 27-29, 1995, VMIC Conf. 1995 ISMIC pp.315-324.
"Electroless Copper Deposition on Metals & Metal Silicides", Cecilia Y. Mak, MRS Bulletin, Aug. 1994, pp. 55-62.

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