High switching speed P-N junction devices with recombination mea

Details High switching speed P-N junction devices with recombination mea High switching speed P-N junction devices with recombination mea

1978-08-21

1981-03-31

Clawson, Jr., Joseph E.

357 34, 357 58, 357 91, 357 38, H01L 29167

Patent

active

042596831

ABSTRACT:
A semiconductor device for operation at high switching speeds includes a region of reduced carrier lifetime situated in the portion of the device in which the peak amount of carrier recombination occurs during device turn-off. This region of reduced carrier lifetime causes fast carrier recombination during device turn-off such that device switching speed is correspondingly increased over that of comparable conventional devices.

REFERENCES:
patent: 3335337 (1967-08-01), Kasugai et al.
patent: 3419764 (1968-12-01), Kasugai et al.
patent: 3440113 (1969-04-01), Wolley
patent: 3553536 (1971-01-01), Neilson
patent: 3728592 (1973-04-01), Joshi et al.
patent: 3877997 (1975-04-01), Brown
patent: 4056408 (1977-11-01), Bartko et al.
patent: 4117505 (1978-09-01), Nakata

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