Method of processing an epitaxial wafer of InP or the like

Details Method of processing an epitaxial wafer of InP or the like Method of processing an epitaxial wafer of InP or the like

1996-02-20

1998-03-03

Kunemund, Robert

Fishing, trapping, and vermin destroying

437126, 437129, 117 93, 117 97, H02L 2120

Patent

active

057233608

ABSTRACT:
Fine processing of InP epitaxial wafers including As, In and P for producing laser diodes, light emitting diodes or photodiodes. The InP epitaxial wafer is selectively covered with striped protection mask films. The wafer is etched by some etchant which forms normal-mesas or mountain-shaped stripes under the masks. Then the wafer is again etched by a gas of thermally dissolved AsCl.sub.3 till the stripes have rectangle sections with erect surfaces. Buried layers of InP are grown on the eliminated parts of the wafer.

REFERENCES:
Ohkura et al., Electronics Letters, "Low Threshold FS-BH Laser On p-InP Substrate Grown by All-MOCVD", vol. 28, No. 19, Sep. 10, 1992, pp. 1844-1845.
Kimura et al., Mitsubishi Denki GIHO, "Technology of Growing InP Buried Layers by MOCVD (Metallo Organic Chemical Vapor Deposition) Method", vol. 67, No. 8, Aug. 25, 1993, pp. 88-91.
Optical Communication Handbook, First Edition Date: Sep. 1, 1982, Third Edition Date: May 20, 1988, Editor: Hisayoshi Yanai, Publisher: Kunizo Asakura, Asakura Shoten Co., Ltd.
Turley et al, "LPE Growth on Structured (100) InP Substrates and Their Fabrication by Preferential Etching", Journal of Crystal Growth, vol. 58, 1982, pp. 409-416.
Adachi et al, "Chemical Etching Characteristics of (001) InP", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 128, No. 6, Jun. 1981, pp. 1342-1349.
Harrous et al, "Effect of Phosphine Decomposition on the Growth and Substrate Heating of (100) InP In the Hydride Method", Journal of Crystal Growth, vol. 83 (1987), pp. 279-285.

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