Semiconductor device and method of manufacturing same, as well a

Details Semiconductor device and method of manufacturing same, as well a Semiconductor device and method of manufacturing same, as well a

1978-12-21

1981-03-31

Edlow, Martin H.

357 52, 357 55, 357 23, H01L 2990

Patent

active

042596785

ABSTRACT:
The invention relates to a semiconductor cathode based on avalanche breakdown in the p-n junction. The released electrons obtain extra accelerating energy by means of an electrode provided on the device. The achieved efficiency increase makes the manufacture of such cathodes in planar silicon technology sensible. Such cathodes are applied, for example, in cathode ray tube, flat displays, pick-up tubes and electron lithography.

REFERENCES:
patent: 2960659 (1960-11-01), Burton
patent: 3060327 (1962-10-01), Dacey
patent: 3581151 (1971-05-01), Boyle
patent: 3808477 (1974-04-01), Swank
patent: 4000503 (1976-12-01), Matare

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