Method of making a light-emitting device

Fishing – trapping – and vermin destroying

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437 37, 437127, H01L 21265, H01L 2100, H01L 21203, H01L 21205

Patent

active

057233489

ABSTRACT:
A light-emitting device, in which a film obtained by ion-implanting ions that can become a semiconductor material into an oxide film forms at least a part of a light-emitting layer.

REFERENCES:
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4885261 (1989-12-01), Yoshikawa
patent: 5397920 (1995-03-01), Tran
D.J. DiMaria, et al. "Electroluminescence Studies in silicon dioxide films containing tiny silicon islands", J. Appl. Phys. 56, 1984, pp. 401-416.

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