Photomasks and a manufacturing method thereof

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, 430311, G03F 900

Patent

active

057232369

ABSTRACT:
A half-tone film, a light-shielding film and resist are formed on a transparent substrate in this order, and the resist is removed by adjusting the dosage of exposure for each area so that film-thickness differences are provided. A predetermined pattern is formed on the half-tone film and the light-shielding film by utilizing the film-thickness differences. This half-tone pattern is a pattern to be copied onto resist on a wafer. Further, the light-shielding film is formed between the inside edge of a scribe line that separates chips from each other and the peripheral edge of the photomask. Thus, it becomes possible to prevent multiple exposure that tends to be generated upon conducting exposure using the step-and-repeat system, and also to maintain high light contrast by using a half-tone film.

REFERENCES:
patent: 5429896 (1995-07-01), Hasegawa et al.
Yamada et al, "Photomask and X-Ray Mask Technology II,"SPIE', vol. 2512, 20-21 Apr. 1995, Kawasaki City, Kanagawa, Japan, pp. 356-357.

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